| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving element that has higher input resistance. <P>SOLUTION: A second electrode 109 at least comprises: a first metal layer 121 of titanium formed in contact with a p-type electrode connection layer 107; and a second metal layer 122 formed on and in contact with the first metal layer and formed by molybdenum, which is a high-melting point metal having a melting point higher than that of platinum. In an embodiment, the second electrode 109 comprises, in addition to the first metal layer 121 and the second metal layer 122: a third metal layer 123 of titanium formed on and in contact with the second metal layer 122; a fourth metal layer 124 of platinum formed on and in contact with the third metal layer 123; and a fifth metal layer 125 of gold formed on and in contact with the fourth metal layer 124. <P>COPYRIGHT: (C)2013,JPO&INPIT |
