SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a lamination structure of a gate insulation film including a high-dielectric-constant film to which La and the like are introduced with intent to adjust a threshold value of an n-channel MISFET, and a metal gate electrode on an upper part of the gate insulation film, the semiconductor device preventing increase of a work function of the n-channel MISFET due to diffusion of oxidizing species from a substrate side to a bottom face of the metal gate electrode when a gate width of the gate electrode is reduced.

SOLUTION: An Al containing film 8c is formed for preventing diffusion of oxidizing species between a Hf- and Ln-containing insulation film 5b and a metal film 9 serving as a metal gate electrode on top of the insulation film 5b.

COPYRIGHT: (C)2013,JPO&INPIT