发明名称 PROGRAMMING MEMORY CELLS
摘要 Methods for programming, memory devices, and methods for reading are disclosed. One such method for programming a memory device (e.g., an SLC memory device) includes encoding a two level data stream to a three level stream prior to programming the memory.
申请公布号 WO2012154397(A3) 申请公布日期 2013.01.10
申请号 WO2012US34733 申请日期 2012.04.24
申请人 MICRON TECHNOLOGY, INC.;VARANASI, CHANDRA 发明人 VARANASI, CHANDRA
分类号 G11C16/34;G11C16/10 主分类号 G11C16/34
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