发明名称 ION IMPLANTER, ION BEAM MEASURING DEVICE, AND ION BEAM MEASUREMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide new ion beam measurement. <P>SOLUTION: An ion beam measuring device 10 includes: a measurement beam source 20 for emitting a measurement beam 12 which generates interaction between the measurement beam 12 and an ion beam 14; and a measurement beam detector 22 for detecting the measurement beam 12 which is emitted from the measurement beam source 20 and irradiated with the ion beam 14. The ion beam measuring device 10 can be applied to, for example, an ion implanter. The ion beam measuring device 10 may be a beam monitor which provides output related to the ion beam to a control system of the ion implanter. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013008659(A) 申请公布日期 2013.01.10
申请号 JP20120009189 申请日期 2012.01.19
申请人 SUMITOMO HEAVY IND LTD 发明人 TAKAHASHI NOBUAKI
分类号 H01J37/317;H01L21/265 主分类号 H01J37/317
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