发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING AN ERROR CORRECTION FUNCTION AND MEMORY SYSTEM INCLUDING THE SAME
摘要 PURPOSE: A semiconductor memory device with an error correcting function and a memory system including the same are provided to improve an operation speed by generating an additional check bit except a normal check bit and an additional syndrome bit except a normal syndrome bit to correct errors. CONSTITUTION: A check bit generating circuit(110) generates check bits based on input data. A memory cell array(120) stores input data and check bits. An error calculating circuit(150) generates syndrome bits based on check bits and a first data received from the memory cell array and generates error data by calculating errors based on the syndrome bits. An error correcting circuit(170) corrects the first data based on the first data and the error data. The check bit generating circuit generates normal check bits and additional check bits. The error calculating circuit generates normal syndrome bits and additional syndrome bits.
申请公布号 KR20130004045(A) 申请公布日期 2013.01.09
申请号 KR20120017090 申请日期 2012.02.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JONG WOOK
分类号 G11C29/42;G06F11/10 主分类号 G11C29/42
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