发明名称 |
Semiconductor structure and a method of forming the same |
摘要 |
Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate. The plurality of adjacent structured regions includes adjacent substrate surfaces with {111} crystal planes and a III-V semiconductor material layer above the top side of the substrate. A semiconductor device region includes at least one semiconductor device structure. The semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate.
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申请公布号 |
US8350273(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20090551021 |
申请日期 |
2009.08.31 |
申请人 |
INFINEON TECHNOLOGIES AG;VIELEMEYER MARTIN HENNING ALBRECHT |
发明人 |
VIELEMEYER MARTIN HENNING ALBRECHT |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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