发明名称 Semiconductor structure and a method of forming the same
摘要 Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate. The plurality of adjacent structured regions includes adjacent substrate surfaces with {111} crystal planes and a III-V semiconductor material layer above the top side of the substrate. A semiconductor device region includes at least one semiconductor device structure. The semiconductor device region is arranged above the plurality of adjacent structured regions at the top side of the substrate.
申请公布号 US8350273(B2) 申请公布日期 2013.01.08
申请号 US20090551021 申请日期 2009.08.31
申请人 INFINEON TECHNOLOGIES AG;VIELEMEYER MARTIN HENNING ALBRECHT 发明人 VIELEMEYER MARTIN HENNING ALBRECHT
分类号 H01L29/04 主分类号 H01L29/04
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