发明名称 |
Method of bonding two substrates |
摘要 |
The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
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申请公布号 |
US8349703(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20070525493 |
申请日期 |
2007.11.23 |
申请人 |
SOITEC;KERDILES SEBASTIEN;MICHEL WILLY;SCHWARZENBACH WALTER;DELPRAT DANIEL;BEN MOHAMED NADIA |
发明人 |
KERDILES SEBASTIEN;MICHEL WILLY;SCHWARZENBACH WALTER;DELPRAT DANIEL;BEN MOHAMED NADIA |
分类号 |
H01L21/30;H01L21/46 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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