| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor thin film crystallization method and a semiconductor thin film crystallization apparatus, which can limit influence of variation in annealing performed by every plurality of optical units. <P>SOLUTION: In a semiconductor thin film crystallization method of irradiating first laser beams LB onto a substrate 14 by branching the first laser beams into L (L is an integer more than 1) second laser beams LBs to crystallize an amorphous silicon thin film on the substrate in each of n (n is an integer more than 1) optical units 13, in the case where pixels 43 formed on the substrate are separated at a first pitch a and the L second laser beams are separated at a second pitch represented as a×n×m (m is an integer of one or more), a pixel which is not irradiated by the second laser beams irradiated from one optical unit existing in the second pitch among the n optical units and adjacent to a pixel irradiated by the second laser beams, is irradiated by one optical unit other than the one optical unit. <P>COPYRIGHT: (C)2013,JPO&INPIT |
