| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the rate of etching in a case where radicals mainly promote the etching, in an etching apparatus 1 arranged so that discharge plasma is generated by an inductive coupling method in a plasma generating chamber. <P>SOLUTION: An etching apparatus comprises: a vacuum chamber 3 having a plasma generation chamber 3a where plasma is generated by the inductive discharge method, and a standby chamber 3b communicating with the plasma generating chamber, where an object S to be processed that is to be etched is disposed; and gas introducing means 9 for introducing a predetermined etching gas into the plasma generating chamber. The etching apparatus further comprises: position-changing means 10 and 12 for changing the position of the object arranged in the standby chamber so that the object S to be processed is located in a generating region of plasma P in a case where radicals mainly promote etching depending upon the kind of etching gas and the kind of the object to be processed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
