发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light emitting device. <P>SOLUTION: A method of manufacturing a semiconductor light emitting device includes steps of: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate, to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the semiconductor layer from a surface of the separated semiconductor growth substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013004981(A) |
申请公布日期 |
2013.01.07 |
申请号 |
JP20120134582 |
申请日期 |
2012.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
JOHN SANG MAEN;PARK KI HO;KIM BAM-JUN;LYU HYUN SEOK;LEE JUNG-HYUN;KIM BOUNG-KYUNG;KIM KI-SANG;YOON SAK-HO |
分类号 |
H01L33/32;C30B29/38;C30B33/12;H01L21/205 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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