发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light emitting device. <P>SOLUTION: A method of manufacturing a semiconductor light emitting device includes steps of: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate, to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the semiconductor layer from a surface of the separated semiconductor growth substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013004981(A) 申请公布日期 2013.01.07
申请号 JP20120134582 申请日期 2012.06.14
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 JOHN SANG MAEN;PARK KI HO;KIM BAM-JUN;LYU HYUN SEOK;LEE JUNG-HYUN;KIM BOUNG-KYUNG;KIM KI-SANG;YOON SAK-HO
分类号 H01L33/32;C30B29/38;C30B33/12;H01L21/205 主分类号 H01L33/32
代理机构 代理人
主权项
地址