SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A gate electrode and an electrode for protective diode are coupled to each other. An insulating film below the electrode for protective diode makes a leak current flow between the electrode for protective diode and an electron transit layer and an electron supply layer when a voltage equal to or more than a given value is applied to the gate electrode. The given value is higher than a voltage by which a HEMT is on-operated and lower than a breakdown voltage of a gate insulating film.