THIN FILM TRANSISTOR DEVICE AND METHOD FOR PRODUCING THIN FILM TRANSISTOR DEVICE

摘要

Provided is a thin film transistor device that has a suppressed kink phenomenon and superior TFT characteristics. The thin film transistor device is equipped with: a gate electrode (2) formed on a substrate (1); a gate insulating film (3) formed on the gate electrode (2); a crystalline silicon thin film (4) formed on the gate insulating film (3); a first semiconductor film (5) formed on the crystalline silicon thin film (4); a pair of second semiconductor films (6) formed on the first semiconductor film (5); a source electrode (8S) formed above one of the pair of second semiconductor films (6); and a drain electrode (8D) formed above the other of the pair of second semiconductor films (6). If the energy level of the bottom end of the conduction band of the crystalline silicon thin film (4) and of the first semiconductor film (5) is respectively ECP and EC1, then ECP C1.