PATTERNING PROCESS AND RESIST COMPOSITION

摘要

PURPOSE: A pattern formation method with high etching-resistance and dissolution contrast, and a resist composition are provided to enhance dissolution contrast and etching-resistance by lowering the solubility of an exposed part and increasing the solubility of a non-exposure wafer. CONSTITUTION: A pattern formation method comprises the following steps: coating a resist composition on a substrate; heating the coated composition; exposing an energy beam by using a resist film; heating the exposed film; and obtaining a negative pattern in which a light exposed part is not dissolved by dissolving the non-exposure wafer. The resist composition includes a polymeric compound containing: a recurring unit which is completed by polymerizing cycloolefin, an organic solvent, and a photoacid generator; or a polymer compound containing a recurring unit which is completed by polymerizing cucloolefin, a polymer compound containing a recurring unit of the sulfonate, and organic solvent. [Reference numerals] (AA) Embodiment 1-1; (BB) Thickness(A); (CC) After FEB; (DD) After TMAH development; (EE) After BA development; (FF) Exposure(mJ/cm^2)