发明名称 |
Method for manufacturing semiconductor device |
摘要 |
An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks. In a method for manufacturing a semiconductor device including a channel-etched inverted-stagger thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by wet etching in which an etching solution is used.
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申请公布号 |
US8343799(B2) |
申请公布日期 |
2013.01.01 |
申请号 |
US20090582084 |
申请日期 |
2009.10.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;ITO SHUNICHI;HOSOBA MIYUKI |
发明人 |
ITO SHUNICHI;HOSOBA MIYUKI |
分类号 |
H01L21/00;H01L21/16;H01L21/336;H01L21/8234;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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