发明名称 Semiconductor memory device
摘要 In order to latch and store a word line reset level voltage (negative voltage) which is set during reset operation, a word line driver includes PMOS transistors and NMOS transistors. The word line driver further includes a stress-reducing PMOS transistor and an NMOS transistor, and also a word line bias control circuit which controls and activates a supply bias during setting of a word line, start of resetting, and a reset period.
申请公布号 US8345506(B2) 申请公布日期 2013.01.01
申请号 US201113100939 申请日期 2011.05.04
申请人 PANASONIC CORPORATION;IIDA MASAHISA 发明人 IIDA MASAHISA
分类号 G11C8/00 主分类号 G11C8/00
代理机构 代理人
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