Method for doping silicon substrate, involves annealing semiconductor substrate to obtain doped zone extending below and on both sides of stud and having approximately homogeneous concentration of doping agents

摘要

The method involves forming a stud on a surface of a semiconductor substrate (SUB), where the stud is formed by resin. Doping agents are established on the covered surface of the stud to obtain a first doped zone (ZP) on both sides of the stud in the semiconductor substrate. The semiconductor substrate is annealed to obtain a second doped zone (ZPD) extended below and on both sides of the stud and having an approximately homogeneous concentration of doping agents. The stud is removed before annealing.