| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory. <P>SOLUTION: A semiconductor device (nonvolatile memory) has a circuit configuration similar to that of a general SRAM, and the leakage of charges from a memory holding part of the SRAM is prevented by disposing a transistor with small off current between a power supply potential line and the memory holding part. As the transistor with small off current for preventing the leakage of the charges from the memory holding part, a transistor formed using an oxide semiconductor film is preferably used. This configuration is also applicable to a shift register, and can provide the shift register with low power consumption. <P>COPYRIGHT: (C)2013,JPO&INPIT |
