SEMICONDUCTOR DEVICE INCLUDING MULTIPLE METAL SEMICONDUCTOR ALLOY REGION AND A GATE STRUCTURE COVERED BY A CONTINUOUS ENCAPSULATING LAYER

摘要

A method of forming a semiconductor device is provided that in some embodiments encapsulates a gate silicide in a continuous encapsulating material. By encapsulating the gate silicide in the encapsulating material, the present disclosure substantially eliminates shorting between the gate structure and the interconnects to the source and drain regions of the semiconductor device.