MAGNETOSTRICTIVE LAYER SYSTEM

摘要

The invention relates to a magnetostrictive layer system, comprising at least one layer sequence comprising an antiferromagnetic (AFM) layer and a magnetostrictive, ferromagnetic (FM) layer arranged directly on the antiferromagnetic layer, wherein the layer sequence has an associated exchange bias (EB) field, wherein the EB-induced degree of magnetization of the FM layer in the absence of an external magnetic field lies in a range between 85% and 100% and wherein the angle aopt, which is enclosed by the EB field direction and the magnetostriction direction that has the maximum piezomagnetic coefficient in the absence of an external magnetic field, within a plane parallel to the AFM layer and the FM layer, lies in a range between 10° and 80°.