发明名称 |
HIGH-ENDURANCE PHASE CHANGE MEMORY DEVICES AND METHODS FOR OPERATING THE SAME |
摘要 |
Phase change based memory devices and methods for operating such devices described herein overcome the set or reset failure mode and result in improved endurance, reliability and data storage performance. A high current repair operation is carried out in response to a set or reset failure of a phase change memory cell. The higher current repair operation can provide a sufficient amount of energy to reverse compositional changes in the phase change material which can occur after repeated set and reset operations. By reversing these compositional changes, the techniques described herein can recover a memory cell which experienced a set or reset failure, thereby extending the endurance of the memory cell. In doing so, phase change based memory devices and methods for operating such devices are provided which have high cycle endurance. |
申请公布号 |
US2012327708(A1) |
申请公布日期 |
2012.12.27 |
申请号 |
US201213472395 |
申请日期 |
2012.05.15 |
申请人 |
DU PEI-YING;WU CHAO-I;LEE MING-HSIU;KIM SANGBUM;LAM CHUNG HON;INTERNATIONAL BUSINESS MACHINES CORPORATION;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
DU PEI-YING;WU CHAO-I;LEE MING-HSIU;KIM SANGBUM;LAM CHUNG HON |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|