| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel configuration capable of reducing power consumption and a method of driving the same. <P>SOLUTION: A memory cell comprises a capacitive element, a first transistor, and a second transistor. An off current of the second transistor is smaller than that of the first transistor. A switching speed of the first transistor is higher than that of the second transistor. The first transistor, the second transistor, and the capacitive element are electrically connected in series. Accumulation of charges on the capacitive element and discharge of charges from the capacitive element are performed both via the first transistor and the second transistor. Thereby, information can be written and read to and from a semiconductor device at high speed, while reducing the power consumption of the semiconductor device. <P>COPYRIGHT: (C)2013,JPO&INPIT |
