| 摘要 |
PURPOSE: A method for regenerating a substrate is provided to improve the regeneration rate of the substrate by minimizing a removal depth of a defect or pattern from the substrate. CONSTITUTION: A sapphire single crystal substrate including a pattern is prepared(S10). A deposition layer is formed on the sapphire single crystal substrate including a pattern(S20). The deposition layer is planarized under a preset condition(S30). The deposition layer and the pattern included in the sapphire single crystal substrate are removed with a plasma etching process(S40). The planarization of the sapphire single crystal substrate is tested(S50). The planarized regeneration substrate is completed(S60). [Reference numerals] (AA) No; (BB) Yes; (S10) Preparing a substrate including a pattern; (S20) Adding a deposition layer to a substrate; (S30) Planarizing a deposition layer; (S40) Plasma etching; (S50) Is planarization above a reference value?; (S60) Planarized regeneration substrate
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