发明名称 |
Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator |
摘要 |
A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics. |
申请公布号 |
US8337661(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US20080128926 |
申请日期 |
2008.05.29 |
申请人 |
SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S.;APPLIED MATERIALS, INC. |
发明人 |
SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S. |
分类号 |
H01L21/00;C23C16/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|