发明名称 Plasma reactor with plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator
摘要 A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
申请公布号 US8337661(B2) 申请公布日期 2012.12.25
申请号 US20080128926 申请日期 2008.05.29
申请人 SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S.;APPLIED MATERIALS, INC. 发明人 SHANNON STEVEN C.;RAMASWAMY KARTIK;HOFFMAN DANIEL J.;MILLER MATTHEW L.;COLLINS KENNETH S.
分类号 H01L21/00;C23C16/00 主分类号 H01L21/00
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