| 摘要 |
The present invention relates to a method of programming a nonvolatile memory device. A method of programming a nonvolatile memory device in accordance with an aspect of the present invention can include performing an erase operation, counting an erase pulse application number once the erase operation is completed, comparing the counted erase pulse application number and a reference, defining a program start voltage based on the comparison result, and performing a program operation using the defined program start voltage. |
