发明名称 |
Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes |
摘要 |
During the fabrication of advanced transistors, significant dopant diffusion may be suppressed by performing a millisecond anneal process after completing the basic transistor configuration, wherein a stress memorization technique may also be obtained by forming a strain-inducing area within a sidewall spacer structure. Due to the corresponding void formation in the spacer structure, a high tensile strain component may be obtained, in the adjacent channel region. |
申请公布号 |
US8338885(B2) |
申请公布日期 |
2012.12.25 |
申请号 |
US201213401896 |
申请日期 |
2012.02.22 |
申请人 |
HOENTSCHEL JAN;FEUDEL THOMAS;ILLGEN RALF;ADVANCED MICRO DEVICES, INC. |
发明人 |
HOENTSCHEL JAN;FEUDEL THOMAS;ILLGEN RALF |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|