发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.
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申请公布号 |
US2012319190(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201113202221 |
申请日期 |
2011.03.03 |
申请人 |
ZHU HUILONG;WU HAO;XIAO WEIPING;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
ZHU HUILONG;WU HAO;XIAO WEIPING |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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