发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A compound semiconductor device includes a substrate; and a compound semiconductor multilayer structure which is formed above the substrate and which contains compound semiconductors containing Group III elements, wherein the compound semiconductor multilayer structure has a thickness of 10μm or less and a percentage of aluminum atoms is 50% or more of the number of atoms of the Group III elements.
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申请公布号 |
US2012320642(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213469564 |
申请日期 |
2012.05.11 |
申请人 |
IMANISHI KENJI;FUJITSU LIMITED |
发明人 |
IMANISHI KENJI |
分类号 |
H02M5/458;H01L21/20;H01L29/20;H03F3/19 |
主分类号 |
H02M5/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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