SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and manufacturing method therefor includes a &Sgr;-shaped embedded source or drain regions. A U-shaped recess is formed in a Si substrate using dry etching and a SiGe layer is grown epitaxially on the bottom of the U-shaped recess. Using an orientation selective etchant having a higher etching rate with respect to Si than SiGe, wet etching is performed on the Si substrate sidewalls of the U-shaped recess, to form a &Sgr;-shaped recess.