发明名称 |
COMPOSITION FOR WET ETCHING OF CRYSTALLIZED ITO |
摘要 |
PURPOSE: An etching solution for a crystallized ITO(Indium-Tin Oxide) film is provided to is provided to prevent corrosion of equipment and damage to a photoresist and to effectively remove residues. CONSTITUTION: An etching solution for a crystallized ITO film comprises 10-20wt.% of hydrochloric acid, 1-20wt.% of a salt compound, and 100wt.% of deionized water. The salt compound is metallic halogen compound excluding ferric chloride. The etching solution is used for etching a transparent conductive film including ITO.
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申请公布号 |
KR20120136977(A) |
申请公布日期 |
2012.12.20 |
申请号 |
KR20110056232 |
申请日期 |
2011.06.10 |
申请人 |
SOULBRAIN CO., LTD. |
发明人 |
LIM, JUNG HUN;LEE, YANG HWA |
分类号 |
C23F1/30;C09K13/04;C23F1/02 |
主分类号 |
C23F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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