发明名称 COMPOSITION FOR WET ETCHING OF CRYSTALLIZED ITO
摘要 PURPOSE: An etching solution for a crystallized ITO(Indium-Tin Oxide) film is provided to is provided to prevent corrosion of equipment and damage to a photoresist and to effectively remove residues. CONSTITUTION: An etching solution for a crystallized ITO film comprises 10-20wt.% of hydrochloric acid, 1-20wt.% of a salt compound, and 100wt.% of deionized water. The salt compound is metallic halogen compound excluding ferric chloride. The etching solution is used for etching a transparent conductive film including ITO.
申请公布号 KR20120136977(A) 申请公布日期 2012.12.20
申请号 KR20110056232 申请日期 2011.06.10
申请人 SOULBRAIN CO., LTD. 发明人 LIM, JUNG HUN;LEE, YANG HWA
分类号 C23F1/30;C09K13/04;C23F1/02 主分类号 C23F1/30
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