发明名称 MEMORY DEVICE
摘要 <p>PURPOSE: A memory device is provided to reduce a circuit area by decreasing the number of transistors in a memory cell. CONSTITUTION: A memory cell(100) determines the content of a first data by comparing the first data with a second data that is a search data. The writing and retaining of the first data are controlled by turning on or off a first transistor(111). One of a source and a drain of a second transistor(112) is the second data. The potential of the gate of the second transistor becomes the first data. One of a source and a drain of a third transistor(113) is electrically connected to the other of the source and drain of the second transistor. The potential of the gate of the third transistor becomes the first data.</p>
申请公布号 KR20120137263(A) 申请公布日期 2012.12.20
申请号 KR20120060846 申请日期 2012.06.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MATSUBAYASHI DAISUKE
分类号 G11C7/00;H01L29/786 主分类号 G11C7/00
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