| 摘要 |
A semiconductor photovoltaic device comprises a semiconductor substrate having a first surface and a second surface, the first surface and the second surface being opposed to each other, a plurality of trenches extending into the semiconductor substrate from the first surface, the first surface being a substantially planar surface, a dopant region in the semiconductor substrate near the first surface and the plurality of trenches, a first conductive layer over the semiconductor substrate, and a second conductive layer on the second surface of the semiconductor substrate. |
