N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF

摘要

The present invention is related to a method of manufacturing an n-type AIN single crystal having a low amount of halogen impurity and excellent electric properties by HVPE. HVPE has a faster film forming speed than MOVPE and can provide a single crystal having high crystallinity. This involves (A) forming an aluminum nitride crystal layer having a thickness of not less than 0.5nm on a single crystal substrate which is set a temperature of 1000 to 1150°C by vapor-phase growing, contacting the substrate with a gas containing an aluminum halide and a nitrogen-containing compound; and (B) preheating the substrate to 1200 degrees or more, and forming an n-type conductive semiconductor crystal layer on the AIN crystal layer by vapor-phase growing, contacting the substrate with a gas containing an Al halide, a nitrogen-containing compound and SiH x Cl4-x (wherein x is an integer of 0 to 3).