发明名称 |
Method for Detecting Embedded Voids in a Semiconductor Substrate |
摘要 |
A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P1 for forming the structure; measuring the mass M1 of the substrate; performing thermal treatment; measuring the mass M2 of the substrate; calculating the mass difference between the mass of the substrate measured before and after the performed thermal treatment; and deducing the presence of embedded voids in the structure by comparing the mass difference with a pre-determined value.
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申请公布号 |
US2012315712(A1) |
申请公布日期 |
2012.12.13 |
申请号 |
US201213490828 |
申请日期 |
2012.06.07 |
申请人 |
LEUNISSEN LEONARDUS;HALDER SANDIP;BEYNE ERIC;IMEC |
发明人 |
LEUNISSEN LEONARDUS;HALDER SANDIP;BEYNE ERIC |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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