发明名称 |
TECHNIQUES FOR PROVIDING A SEMICONDUCTOR MEMORY DEVICE |
摘要 |
Techniques for providing a semiconductor memory device are disclosed. In one particular embodiment, the techniques may be realized as a semiconductor memory device including a plurality of memory cells arranged in an array of rows and columns. Each memory cell may include a first region coupled to a source line, a second region coupled to a bit line, and a body region capacitively coupled to at least one word line via a tunneling insulating layer and disposed between the first region and the second region. |
申请公布号 |
WO2012170409(A2) |
申请公布日期 |
2012.12.13 |
申请号 |
WO2012US40891 |
申请日期 |
2012.06.05 |
申请人 |
MICRON TECHNOLOGY INC. |
发明人 |
BANNA, SRINIVASA, R.;VAN BUSKIRK, MICHAEL, A.;THURGATE, TIMOTHY |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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