| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure including an oxide semiconductor layer with a novel structure. <P>SOLUTION: A semiconductor device includes: a first oxide semiconductor layer having a crystal region grown from a surface of the first oxide semiconductor layer to the inside on a substrate having an insulation surface; a second oxide semiconductor layer on the first oxide semiconductor layer; a source electrode layer and a drain electrode layer in contact with the second oxide semiconductor layer; a gate insulation layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer in a region overlapping with the second oxide semiconductor layer on the gate insulation layer. The second oxide semiconductor layer has a crystal grown from the crystal region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
