发明名称 |
NAND FLASH MEMORY HAVING 3-DIMENSIONAL STRUCTURE |
摘要 |
Disclosed is a NAND flash memory which is vertically elongated from a substrate and has a multi-layered lamination structure. A control gate is formed by alternating with an interlayer insulating film. In addition, the control gate is separated in a direction parallel to the substrate through a barrier insulating film. Therefore, only one side of the control gate is in contact with a blocking insulating film. As a result, independent charge-trapping is enabled from one stack structure to both sides thereof. Consequently, the density of flash memory is increased and charge controllability is improved. |
申请公布号 |
WO2012169731(A2) |
申请公布日期 |
2012.12.13 |
申请号 |
WO2012KR03784 |
申请日期 |
2012.05.15 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY;KIM, TAE WHAN;YOU, JOO HYUNG;JIN, JUN |
发明人 |
KIM, TAE WHAN;YOU, JOO HYUNG;JIN, JUN |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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