发明名称 PLASMA PROCESSING APPARATUS AND GAS SUPPLY METHOD THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To suppress transient phenomenon more than ever when processing gas supply is switched alternately, while preventing the processing gases from being mixed. <P>SOLUTION: When two kinds or more of processing gases(e.g. C<SB POS="POST">4</SB>F<SB POS="POST">6</SB>gas and C<SB POS="POST">4</SB>F<SB POS="POST">8</SB>gas) are supplied, while being switched alternately, into a processing chamber during plasma processing of a wafer, supply of each processing gas is turned on/off alternately by setting a predetermined flow rate and zero flow rate repeatedly in a mass flow controller(MFC) provided in the gas supply passage, while opening an on/off valve on the downstream side thereof, for each gas supply passage that supplies the switched processing gas. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012248788(A) 申请公布日期 2012.12.13
申请号 JP20110121475 申请日期 2011.05.31
申请人 TOKYO ELECTRON LTD 发明人 KATO YOSHIYUKI;AMIKURA NORIHIKO;MIYOSHI RISAKO;FUKASAWA KIMIHIRO
分类号 H01L21/3065 主分类号 H01L21/3065
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