| 摘要 |
A device and a device manufacturing process. First, a gettering layer is formed on the bottom surface of a silicon substrate. Gates having a MOS structure are then formed on the principal surface of the silicon substrate, and the gettering layer is removed. According to this manufacturing method, the formation of the gates having a MOS structure is performed such that the gettering layer getters dissolved oxygen present in the silicon substrate. This reduces the concentration of dissolved oxygen in the silicon substrate, resulting in improved device characteristics. |
