发明名称 |
Semiconductor device and method for forming the same |
摘要 |
In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1×1015 to 1×1019 cm−3 and hydrogen at a concentration of 2×1019 to 5×1021 cm−3. |
申请公布号 |
US8330165(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US20090483311 |
申请日期 |
2009.06.12 |
申请人 |
TERAMOTO SATOSHI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TERAMOTO SATOSHI |
分类号 |
H01L29/10;H01L21/336;H01L29/49;H01L29/786 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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