发明名称 |
Deposition methods for the formation of III/V semiconductor materials, and related structures |
摘要 |
Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods. |
申请公布号 |
US8329571(B2) |
申请公布日期 |
2012.12.11 |
申请号 |
US201213371710 |
申请日期 |
2012.02.13 |
申请人 |
FIGUET CHRISTOPHE;TOMASINI PIERRE;SOITEC |
发明人 |
FIGUET CHRISTOPHE;TOMASINI PIERRE |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|