| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which prevents discharge of charge from a charge storage element after manufacturing of the semiconductor device to reduce charge damage of a device function element. <P>SOLUTION: A semiconductor device comprises: a device function element formed on a semiconductor substrate; a charge storage element formed on the semiconductor substrate; and an isolation element formed on the semiconductor substrate, and connected between the device function element and the charge storage element, and formed from an electrically rewritable and nonvolatile memory transistor. <P>COPYRIGHT: (C)2013,JPO&INPIT |
