ELECTRIC FIELD EFFECT TYPE TRANSISTOR DRIVING GATE ELECTRODE, AND SENSOR DEVICE HAVING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an electric field effect type transistor which can move a gate electrode.

SOLUTION: An electric field effect type transistor includes a semiconductor layer; at least two active regions in the semiconductor layer; a source electrode and a drain electrode contacting with the active regions; and an insulation layer and a gate electrode on the semiconductor layer between the source electrode and the drain electrode. The electric field effect type transistor has an adsorption part for adsorbing molecules which is disposed between the gate electrode and the insulation layer, and driving means for driving the gate electrode.

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