GaN THIN FILM BONDED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GaN-BASED HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-performance HEMT in which a buffer leakage current and a gate leakage current are suppressed.

SOLUTION: A method of manufacturing a GaN thin film bonded substrate includes steps of: implanting hydrogen ions with an average implantation dosage of 1×1014cm-2or more and 3×1017cm-2or less to a plane 10i at a depth 0.1 μm or more and 100 μm or less from a main surface of a GaN bulk crystal 10; bonding a different composition substrate 20 having a chemical composition different from GaN onto the main surface of the GaN bulk crystal 10 to which hydrogen ions are implanted; and forming a structure with a GaN thin film 10a bonded on the different composition substrate 20, the GaN thin film 10a being obtained by separating the GaN bulk crystal 10 at the plane 10i positioned at the hydrogen ion implanted depth by heat treating the GaN bulk crystal 10. A method of manufacturing a GaN-based HEMT includes a step of growing at least one GaN-based semiconductor layer 30 onto the GaN thin film 10a of the GaN thin film bonded substrate 1.

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