| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method obtained by devising a processing method for a channel formation region of a semiconductor layer, in which a channel formation region is to be formed and a region on the opposite side and neighborhood. <P>SOLUTION: A semiconductor device manufacturing method comprises performing at least a first etching and a second etching on a part of a laminated semiconductor films in which an amorphous semiconductor film is provided at least on a crystalline semiconductor film. The first etching is performed with remaining a part of the amorphous semiconductor film. The second etching is performed to expose, after removing a coating film on the amorphous semiconductor film, a part of the crystalline semiconductor film provided on the laminated semiconductor films under a condition that an etching rate for the amorphous semiconductor film is high and an etching rate for the crystalline semiconductor film is low. <P>COPYRIGHT: (C)2013,JPO&INPIT |
