| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin torque magnetic memory having perpendicular magnetization, which reinforces perpendicular magnetic anisotropy to achieve information holding characteristics. <P>SOLUTION: A storage element comprises: an MTJ (Magnetic Tunnel Junction) structure including a storage layer 17 having perpendicular magnetization with respect to a film surface and holding information depending on a magnetization state of a magnetic substance, a magnetization fixed layer 15 having perpendicular magnetization with respect to the film surface, which serves as reference for information stored in the storage layer 17, and an intermediate layer 16 of nonmagnetic substance provided between the storage layer 17 and the magnetization fixed layer 15. In this case, a cap layer 18 is provided formed from an oxide of more than one layer and adjacent to the storage layer 17 on the opposite side to the intermediate layer 16. <P>COPYRIGHT: (C)2013,JPO&INPIT |
