The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber (335) on at least one substrate (360) by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
申请公布号
WO2012136876(A8)
申请公布日期
2012.12.06
申请号
WO2011FI50303
申请日期
2011.04.07
申请人
PICOSUN OY;KILPI, VAEINOE;LI, WEI-MIN;MALINEN, TIMO;KOSTAMO, JUHANA;LINDFORS, SVEN
发明人
KILPI, VAEINOE;LI, WEI-MIN;MALINEN, TIMO;KOSTAMO, JUHANA;LINDFORS, SVEN