发明名称 |
VERTICAL DIODES FOR NON-VOLATILE MEMORY DEVICE |
摘要 |
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device. |
申请公布号 |
WO2012166945(A2) |
申请公布日期 |
2012.12.06 |
申请号 |
WO2012US40242 |
申请日期 |
2012.05.31 |
申请人 |
CROSSBAR, INC.;HERNER, SCOTT BRAD |
发明人 |
HERNER, SCOTT BRAD |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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