发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an element structure of a liquid crystal display device capable of preventing short-circuiting due to static electricity between a source wire and a gate wire in a manufacturing process. <P>SOLUTION: A source wire includes a first semiconductor layer, a second semiconductor layer, and a conductive layer. At an intersection between the source wire and a gate wire, the conductive layer at an end of the source wire is removed, so that the semiconductor layer protrudes. Note that the material of the gate wire, the first semiconductor layer, the second semiconductor layer, and the conductive layer is the same as the material used for forming a TFT. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2012238863(A) 申请公布日期 2012.12.06
申请号 JP20120154630 申请日期 2012.07.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;KUWABARA HIDEAKI;ARAI YASUYUKI
分类号 H01L29/786;G02F1/1368 主分类号 H01L29/786
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