| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an MRAM capable of high-speed reading. <P>SOLUTION: A semiconductor memory comprises a memory cell array including memory cells arranged in a matrix and sense amplifying circuits 26. Each memory cell includes at least one magnetic resistance element for storing data. In the memory cell array, a plurality of amplifying circuits 30, which are provided for each of n (n≥2) memory cells, are disposed to amplify a potential generated by current application to the magnetic resistance element. Among the plurality of amplifying circuits, one amplifying circuit connected to a memory cell selected corresponding to an inputted address is selected, and the sense amplifying circuit responses to an output from the selected amplifying circuit and identifies the data stored in the magnetic resistance element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
