发明名称 |
Process of producing a resistivity-change memory cell intended to function in a high-temperature environment |
摘要 |
A process of producing a resistivity-change memory cell is described. The process includes a deposition at room temperature, in amorphous state, of a layer of a nitrogen (N)-doped alloy of germanium (Ge) and tellurium (Te) to constitute the resistivity-change material of the memory cell. An annealing is then performed such as to limit the type of re-crystallisation by nucleation starting from the amorphous state of the phase-change material. The material used and the process permit the data retention at high temperature to be significantly improved.
|
申请公布号 |
US2012307552(A1) |
申请公布日期 |
2012.12.06 |
申请号 |
US201113152917 |
申请日期 |
2011.06.03 |
申请人 |
PERNIOLA LUCA;SOUSA VERONIQUE;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT. |
发明人 |
PERNIOLA LUCA;SOUSA VERONIQUE |
分类号 |
G11C11/00;H01L21/06;H01L45/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|